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  • 主管单位:
  • 上海市教育委员会
  • 主办单位:
  • 上海理工大学
  • 主  编:
  • 庄松林
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  • 邮政编码:
  • 200093
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  • 国际标准刊号:
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  • 国内统一刊号:
  • 31-1739/T
  • 邮发代号:
  • 4-401
  • 单  价:
  • 15.00
  • 定  价:
  • 90.00
李彪,李孜,饶俊峰,姜松.磁压缩脉冲发生器的仿真与研究[J].上海理工大学学报,2019,41(4):374-380.
磁压缩脉冲发生器的仿真与研究
Simulation and Research of Magnetic Compression Pulse Generator
投稿时间:2018-04-27  
DOI:10.13255/j.cnki.jusst.2019.04.011
中文关键词:  磁脉冲压缩  PSPICE仿真  磁开关模型  IGBT  窄脉冲
英文关键词:magnetic pulse compression  PSPICE simulation  magnetic switch model  IGBT  narrow pulse
基金项目:
作者单位E-mail
李彪 上海理工大学 光电与计算机工程学院, 上海 200093  
李孜 上海理工大学 光电与计算机工程学院, 上海 200093 18721151258@163.com 
饶俊峰 上海理工大学 光电与计算机工程学院, 上海 200093  
姜松 上海理工大学 光电与计算机工程学院, 上海 200093  
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中文摘要:
      设计一种应用于水中放电能够输出快前沿纳秒级高压窄脉冲的两级磁压缩脉冲发生器,根据磁脉冲压缩原理设计出磁开关相关参数,击穿水介质产生等离子放电通道需要均匀的电场,因此外置磁复位电路清理剩磁。选用铁基纳米晶磁芯在PSPICE仿真软件中创建磁开关模型并添加封装库,磁开关模型能够很好地模拟MPC(magnetic pulse compression)在实际应用中电压电流逐级压缩的工作状态。频率、脉宽和相位可调的优点使IGBT(insulated gate bipolar transistor)在实际应用中常作为初级控制开关,用于辅助MPC设计一种三极管电压反向放大延时电路封装开关模型,来实现与实际选用IGBT开关参数的对应。由仿真结果,50 Ω电阻上输出一个上升沿90 ns,幅值8.5 kV的高压窄脉冲,前沿压缩倍数为6.4。
英文摘要:
      A two-stage magnetic compression pulse generator which can output fast forward nanosecond high voltage narrow pulse was designed for underwater discharge. According to the principle of magnetic pulse compression, the parameters of magnetic switch were designed. Breaking the water medium to generate a plasma discharge channel requires a uniform electric field, so the external magnetic reset circuit cleans up the remanence. The iron-based nanocrystalline core was selected in the PSPICE simulation software to create a magnetic switch model and the encapsulation library was added. The magnetic switch model can well simulate the working state of voltage and current staged compression of MPC (magnetic pulse compression) in practical applications. With the advantages of adjustable frequency, pulse width and phase, IGBT (insulated gate bipolar transistor) is often used as a primary control switch in practical applications. It is used to assist MPC in designing a packaging switch model of a transistor voltage reverse amplification delay circuit to achieve the correspondence with the actual selection of IGBT switch parameters. The simulation results show that a high voltage narrow pulse with a rising edge of 90 ns and an amplitude of 8.5 kV is output on the 50 Ω resistor, and the rising edge compression factor is 6.4.
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