During the preparation process of graphene oxide (GO), the unavoidable introduction of topological structural defects into graphene has a significant adverse impact on the heat transfer property of graphene. In this work, graphene quantum dots (GQDs) were selected as an external carbon source, through the reparation of the structural defects in graphene plane under high temperature graphitization conditions, the free-standing heat-dissipating films based on graphene were fabricated. Compared to the pristine g-GO film, the in-plane thermal conductivity of graphitized graphene oxide/graphene quantum dots (g-GO/GQDs) film was enhanced by 22.1%, reaching 739.04 W/(m·K). Through further structural characterizations of the films, the thermal conductivity enhancement in the presence of GQDs can be attributed to the reparation and formation of carbon sp² lattice domains during the graphitization process. This founding reveals that the reparation of topological structure defects of graphene can efficiently improve the heat dissipation performance of graphene films, providing a new idea for the preparation of high performance heat-dissipation films.