低半波电压铌酸锂薄膜电光调制器仿真与分析
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Simulation and analysis of low half-wave voltage lithium niobate thin film electro-optical modulator
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    摘要:

    针对铌酸锂薄膜Mach-Zehnder电光调制器存在半波电压较大的问题,采用有限元法对方向耦合器耦合模理论进行分析,并对电光调制器的关键结构参数进行优化设计。结果表明:两干涉臂光功率差与波导耦合长度呈正弦函数分布,最小波导耦合长度随耦合间距的增大而增大。在调制臂长度为2 cm,光波长为1550 nm时,仿真计算的半波电压值Vπ为0.9 V,半波电压长度积为1.8 V·cm,消光比达到26 dB。通过调制臂截面分析,得到静电场分量Ex,电位移矢量Dx,以及光模分布,并计算出电光重叠积分因子Γ为0.586。基于上述仿真结果,与以往现有的电光调制器的半波电压(1.4~10.2 V)相比,经优化后的电光调制器的半波电压更低,进而使器件的功耗更低,有利于大规模光电集成。

    Abstract:

    In view of the large half-wave voltage of the lithium niobate thin film Mach-Zehnder electro-optical modulator, the finite element method was used to analyze the coupled mode theory of the directional coupler in detail, and the key structural parameters of the electro-optical modulator were optimized. The results show that the optical power difference between the two interference arms and the coupling length of the waveguide present a sine function distribution, and the minimum coupling length of the waveguide increases as the coupling distance increases. When the modulation arm length is 2 cm and the light wavelength is 1550 nm, the half-wave voltage Vπ calculated by the simulation is 0.9 V. The half-wave voltage length product is 1.8 V·cm, and the extinction ratio reaches 26 dB. Through the cross-section analysis of the modulation arm, the electrostatic field component Ex,the electric displacement vector Dx,and the optical mode distribution are obtained, and the electro-optical overlap integral factor Γ is calculated to be 0.586. Based on the above simulation results, compared with the half-wave voltage(1.4 ~ 10.2 V) of the existing electro-optical modulator, the optimized electro-optical modulator has a lower half-wave voltage. This in turn makes the device power consumption lower, conducive to large-scale optoelectronic integration.

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王生水,魏朝阳,姜晨,高睿,万欣.低半波电压铌酸锂薄膜电光调制器仿真与分析[J].上海理工大学学报,2021,43(5):452-459.

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  • 收稿日期:2020-11-23
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  • 在线发布日期: 2021-10-27
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