In order to further improve the manufacturing quality of semiconductor laser bars and improve the scratching damage during cleavage processing, the SPH-FEM conversion algorithm was used to study the effects of scratching speed and load on the scratching damage of single crystal gallium arsenide (gallium arsenide, GaAs). The anisotropic mechanical characteristic parameters of GaAs {100} crystal plane<110>crystal orientation was calculated based on the generalized Hooke's law. The SPH-FEM conversion algorithm was used to simulate the diamond cutting experiment. The finite element damaged in the scratching process was converted into particles, and the motion trajectory of the damaged particles under the action of the cutter head was studied to determine the damage process of the scratching. The results showed that this method can effectively solve the calculation error problem caused by grid distortion in the large deformation area of traditional finite element methods, revealing the influence of different processing parameters on the scratching damage of gallium arsenide materials, and it had been experimentally verified. This provided a new viewpoint and approach for the scratching damage process of brittle materials.