基于boost效应的XRAM电路研究
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TN 782

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国家自然科学基金资助项目 (12205192)


Research on XRAM circuit based on boost effect
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    摘要:

    电感储能型脉冲电源在脉冲磁场领域有着广泛的应用前景,其中利用多级电感串联充电和并联放电的XRAM电路拓展性更强。提出了一种利用MOSFET开关、且有电容boost效应辅助升流的XRAM电路,其结构简单,便于模块化设计,无需高压直流源就可产生大电流脉冲和脉冲磁场。基于这种拓扑,搭建了由2个两级XRAM电路并联的四级XRAM电路,只需24 V直流供电电压,即可在10 μH电感负载上产生频率10~100 Hz、脉宽0~2 ms的0~150 A脉冲电流,进而产生最大0.125 T的脉冲磁场,验证了方案的可行性。电路仿真验证了电容的升流作用,并对不同充电时间的升流效果进行了比较。通过增加并联支路数量,可以获得更强的脉冲磁场。

    Abstract:

    Inductive energy storage pulse power supply has a wide range of applications in the field of pulsed magnetic field, in which the XRAM circuit utilizing multi-stage inductors in series charging and parallel discharging is more expandable. An XRAM circuit using MOSFET switches and capacitor boost effect to increase the current magnitude was proposed. The structure was simple and easy for modular design. The circuit could generate high-current pulses and pulsed magnetic fields without a high-voltage DC source. Based on the topology, two two-stage XRAM circuits in parallel are constructed, which can generate 0~150 A pulse current with frequency of 10~100 Hz and pulse width of 0~2 ms on a 10 μH inductive load, with only 24 V DC supply voltage. It can generate a pulse magnetic field of up to 0.125 T, which verifies the feasibility of the scheme. Circuit simulations verify the current boost effect of the capacitor, and compare the current boost effect with different charging times. A stronger pulsed magnetic field can be obtained by increasing the number of parallel branches.

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姜松,蔡萌萌,饶俊峰.基于boost效应的XRAM电路研究[J].上海理工大学学报,2025,47(3):309-316.

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  • 收稿日期:2024-04-24
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  • 在线发布日期: 2025-07-17
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